ENHANCING DOUBLE-CHANNEL AlGaN/GaN HEMT PERFORMANCE: INVESTIGATING THE INFLUENCE OF GATE DIELECTRIC AND THICKNESS /
Salvato in:
| Autore principale: | |
|---|---|
| Ente Autore: | |
| Altri autori: | , |
| Natura: | Libro |
| Lingua: | inglese |
| Pubblicazione: |
Dhaka :
EECE DEPT. MIST,
c2024.
|
| Soggetti: | |
| Tags: |
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
Documenti analoghi: ENHANCING DOUBLE-CHANNEL AlGaN/GaN HEMT PERFORMANCE: INVESTIGATING THE INFLUENCE OF GATE DIELECTRIC AND THICKNESS /
- Modeling of AlGaN/GaN High Electron Mobility Transistors
- GaN Technology
- GaN Single Crystal Growth and Application
- Dynamics of Broad-Ridge AlGaInN Laser Diodes
- SEISMIC PERFORMANCE INVES"nGA"nON OF BASE ISOLATION SYSTEM FOR TYPICAL RESIDENTIAL BUILDING IN BANGLADESH
- Growth and Application of AlN Single Crystal