THE EARLY VOLTAGE AND CURRENT GAIN OF IN GA AS DOUBLE HETERO JUNCTION BIPOLAR TRANSISTOR /
Сохранить в:
| Главный автор: | |
|---|---|
| Соавтор: | |
| Другие авторы: | |
| Формат: | |
| Язык: | английский |
| Опубликовано: |
Dhaka :
CE DEPT MIST ,
c 2013.
|
| Предметы: | |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
|
Схожие документы: THE EARLY VOLTAGE AND CURRENT GAIN OF IN GA AS DOUBLE HETERO JUNCTION BIPOLAR TRANSISTOR /
- The Early Voltage and Current Gain of InGaAs Double Heterojunction Bipolar Transistor
- ENHANCING DOUBLE-CHANNEL AlGaN/GaN HEMT PERFORMANCE: INVESTIGATING THE INFLUENCE OF GATE DIELECTRIC AND THICKNESS /
- ANALYSIS AND COMPARISON OF EFFICIENCY AND VOLTAGE GAIN OF SEPIC WITH IGBT AND SNUBBER CIRCUIT AS SWITCHING DEVICE
- Gaining control : capacity management and scheduling /
- Gaining control : managing capacity & priorities /
- SINGLE ELECTRON TRANSISTOR (SET): OPERATION AND APPLICATION PERSPECTIVES