APA引文
Zaman, F. (2026). PHYSICS BASED MODELING AND CIRCUIT LEVEL EVALUATION OF SI-ON SIC MOSFET FOR HIGH-SPEED AND LOW POWER VLSI APPLICATIONS. EECE DEPT. MIST.
芝加哥风格引文
Zaman, Faria. PHYSICS BASED MODELING AND CIRCUIT LEVEL EVALUATION OF SI-ON SIC MOSFET FOR HIGH-SPEED AND LOW POWER VLSI APPLICATIONS. Dhaka: EECE DEPT. MIST, 2026.
MLA引文
Zaman, Faria. PHYSICS BASED MODELING AND CIRCUIT LEVEL EVALUATION OF SI-ON SIC MOSFET FOR HIGH-SPEED AND LOW POWER VLSI APPLICATIONS. EECE DEPT. MIST, 2026.
警告：这些引文格式不一定是100％准确.